silicon epitaxial planar npn transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9116 issue 2 page 1 of 4 mg6330, MG6330-R to-3p plastic package complimentary pnp ? mg9410 designed specifically for audio power amplifier appl ications high current audio bipolar with wide safe operating ar ea absolute maximum ratings (t a = 25c unless otherwise stated) mg6330 MG6330-R v cbo collector ? base voltage 230v 260v v ceo collector ? emitter voltage 230v 260v v ebo emitter ? base voltage 5v i c continuous collector current 15a i b base current 4a p d total power dissipation at t a = 25c 200w t j maximum junction temperature 150c t stg storage temperature range -55 to +150c thermal properties symbols parameters min. typ. max. units r jc thermal resistance, junction to case 0.63 c/w
silicon epitaxial pnp transistor mg6330, MG6330-R semelab semelab semelab semelab limited limited limited limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9116 issue 2 page 2 of 4 electrical characteristics (t a = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units i cbo collector-cut-off current mg6330 v cb = 230v 100 a MG6330-R v cb = 260v i ebo emitter-cut-off-current v eb = 5v 100 a v (br)ceo collector-base breakdown voltage i c = 25ma mg6330 230 v MG6330-R 260 v ce(sat) (1) collector-emitter saturation voltage i c = 5a i b = 0.5a 2.0 v h fe forward-current transfer ratio i c = 5a v ce = 4v 70 140 dynamic characteristics f t transition frequency i e = -2a v ce = 12v 60 mhz c ob output capacitance v cb = 10v f = 1.0mhz 250 pf notes notes notes notes pulse width 300us, 2%t
silicon epitaxial pnp transistor mg6330, mg6330 semelab semelab semelab semelab limited limited limited limited coventry road, lutterworth, leicestershire, le17 4j b telephone +44 (0) 1455 556565 fax +44 (0) 1455 552612 typical characteristics (t epitaxial pnp transistor mg6330 -r coventry road, lutterworth, leicestershire, le17 4j b fax +44 (0) 1455 552612 email: sales@semelab-tt.com website: http://www.semelab (t a = 25c unless otherwise stated) http://www.semelab -tt.com document number 9116 issue 2 page 3 of 4
silicon epitaxial pnp transistor mg6330, mg6330 semelab semelab semelab semelab limited limited limited limited coventry road, lutterworth, leicestershire, le17 4j b telephone +44 (0) 1455 556565 fax +44 (0) 1455 552612 typical characteristics continued mechanical data dimensions in mm (inches) pin1 pin1 pin1 pin1 ? ?? ? base base base base b epitaxial pnp transistor mg6330 -r coventry road, lutterworth, leicestershire, le17 4j b fax +44 (0) 1455 552612 email: sales@semelab-tt.com website: http://www.semelab continued (t a = 25c unless otherwise stated) to3p to3p to3p to3p base base base base pin2 pin2 pin2 pin2 ? ?? ? collector collector collector collector pin3 pin3 pin3 pin3 - -- - emitter emitter emitter emitter b c e http://www.semelab -tt.com document number 9116 issue 2 page 4 of 4 emitter emitter emitter emitter
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